公开(公告)号：US08354586B2

公开(公告)日：2013-01-15

申请号：US12923672

申请日：2010-10-01

申请人： Scott V. Thomsen ,  Willem den Boer ,  Yiwei Lu

发明人： Scott V. Thomsen ,  Willem den Boer ,  Yiwei Lu

IPC分类号： H01L31/0224

CPC分类号： H01L31/0392 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： Certain example embodiments relate to a transparent conductor film stack with cadmium stannate used as a front contact layer and/or a buffer layer in a photovoltaic device or the like. The cadmium stannate-based layers may be provided between the front glass substrate and the semiconductor absorber film in a photovoltaic device (e.g., a CdS and/or CdTe based photovoltaic device). In certain example embodiments, the buffer layer based on cadmium stannate may have a higher resistivity than the transparent conductive oxide layer based on cadmium stannate. In certain example embodiments, one or more index matching layer(s) may be provided between the glass substrate and the layer(s) comprising cadmium stannate, e.g., to help overcome the optical mismatch between the glass substrate and the CdSnOx.

摘要翻译： 某些示例实施例涉及在光伏器件等中用作前接触层和/或缓冲层的锡酸镉的透明导体膜堆叠。 可以在光电器件（例如，CdS和/或CdTe基光电器件）中的前玻璃基板和半导体吸收膜之间设置锡酸镉基层。 在某些示例性实施例中，基于锡酸镉的缓冲层可以具有比基于锡酸镉的透明导电氧化物层更高的电阻率。 在某些示例性实施例中，可以在玻璃基板和包含锡酸镉的层之间提供一个或多个折射率匹配层，例如以帮助克服玻璃基板和CdSnOx之间的光学失配。

公开(公告)号：US20120080090A1

公开(公告)日：2012-04-05

申请号：US12923672

申请日：2010-10-01

申请人： Scott V. Thomsen ,  Willem den Boer ,  Yiwei Lu

发明人： Scott V. Thomsen ,  Willem den Boer ,  Yiwei Lu

IPC分类号： H01L31/02 ,  C23C14/34

CPC分类号： H01L31/0392 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： Certain example embodiments relate to a transparent conductor film stack with cadmium stannate used as a front contact layer and/or a buffer layer in a photovoltaic device or the like. The cadmium stannate-based layers may be provided between the front glass substrate and the semiconductor absorber film in a photovoltaic device (e.g., a CdS and/or CdTe based photovoltaic device). In certain example embodiments, the buffer layer based on cadmium stannate may have a higher resistivity than the transparent conductive oxide layer based on cadmium stannate. In certain example embodiments, one or more index matching layer(s) may be provided between the glass substrate and the layer(s) comprising cadmium stannate, e.g., to help overcome the optical mismatch between the glass substrate and the CdSnOx.

摘要翻译： 某些示例实施例涉及在光伏器件等中用作前接触层和/或缓冲层的锡酸镉的透明导体膜堆叠。 可以在光电器件（例如，CdS和/或CdTe基光电器件）中的前玻璃基板和半导体吸收膜之间设置锡酸镉基层。 在某些示例性实施例中，基于锡酸镉的缓冲层可以具有比基于锡酸镉的透明导电氧化物层更高的电阻率。 在某些示例性实施例中，可以在玻璃基板和包含锡酸镉的层之间提供一个或多个折射率匹配层，例如以帮助克服玻璃基板和CdSnOx之间的光学失配。

公开(公告)号：US20080210303A1

公开(公告)日：2008-09-04

申请号：US12068117

申请日：2008-02-01

申请人： Yiwei Lu ,  Willem den Boer ,  David Lerin ,  Scott V. Thomsen

发明人： Yiwei Lu ,  Willem den Boer ,  David Lerin ,  Scott V. Thomsen

IPC分类号： H01L31/0264 ,  H01L31/04

CPC分类号： H01L31/022425 ,  B32B17/10036 ,  B32B17/10229 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  Y02E10/50

摘要： This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.

摘要翻译： 本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。 在某些示例性实施例中，光伏器件等的前电极包括多层涂层，其包括至少一种透明导电氧化物（TCO）层（例如，由氧化锡，ITO，氧化锌或 类似）和/或至少一个导电的基本上金属的IR反射层（例如，基于银，金等）。 在某些示例中，多层前电极涂层可以包括一个或多个导电金属氧化物层和一个或多个导电的基本上金属的IR反射层，以便提供减少的可见光反射，增加的电导率 ，更便宜的可制造性和/或增加的红外（IR）反射能力。 在本发明的某些示例性实施例中，前玻璃基板的至少一个表面可以纹理化。

公开(公告)号：US6020590A

公开(公告)日：2000-02-01

申请号：US10847

申请日：1998-01-22

申请人： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

发明人： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

IPC分类号： H01L27/146 ,  G02F1/13 ,  G01T1/24

CPC分类号： H01L27/14663 ,  H01L27/14676

摘要： This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.

摘要翻译： 本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。 在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。 在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便 以在绝缘层中形成通孔或孔。 为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。

公开(公告)号：US08203073B2

公开(公告)日：2012-06-19

申请号：US12068117

申请日：2008-02-01

申请人： Yiwei Lu ,  Willem den Boer ,  David Lerin ,  Scott V. Thomsen

发明人： Yiwei Lu ,  Willem den Boer ,  David Lerin ,  Scott V. Thomsen

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  B32B17/10036 ,  B32B17/10229 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  Y02E10/50

摘要： This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.

摘要翻译： 本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。 在某些示例性实施例中，光伏器件等的前电极包括多层涂层，其包括至少一个透明导电氧化物（TCO）层（例如，由氧化锡，ITO，氧化锌或 类似）和/或至少一个导电的基本上金属的IR反射层（例如，基于银，金等）。 在某些示例中，多层前电极涂层可以包括一个或多个导电金属氧化物层和一个或多个导电的基本上金属的IR反射层，以便提供减少的可见光反射，增加的电导率 ，更便宜的可制造性和/或增加的红外（IR）反射能力。 在本发明的某些示例性实施例中，前玻璃基板的至少一个表面可以纹理化。

公开(公告)号：US5994157A

公开(公告)日：1999-11-30

申请号：US10639

申请日：1998-01-22

申请人： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

发明人： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

IPC分类号： H01L27/146 ,  H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14658

摘要： This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.

摘要翻译： 本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。 在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。 在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便 以在绝缘层中形成通孔或孔。 为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。

公开(公告)号：US5994836A

公开(公告)日：1999-11-30

申请号：US17206

申请日：1998-02-02

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Scott V. Thomsen

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Scott V. Thomsen

IPC分类号： H01L27/32 ,  H01L51/50 ,  H01J1/62

CPC分类号： H01L27/3283 ,  H01L51/5012 ,  H01L2251/5392 ,  H01L51/56

摘要： An organic light emitting diode (OLED) array structure, and corresponding method of making same are provided. Each OLED pixel includes a first electrode on a substrate, a second electrode on a substrate, and an organic emission layer disposed between the first and second electrodes so as to emit visible light when a suitable potential is applied thereto by the electrodes. In accordance with certain embodiments of this invention, a step covering or coverage layer is provided over step or edge areas of the first electrode in order to reduce the structures susceptibility to breakdown at pixel edges thereby improving yields.

摘要翻译： 提供了一种有机发光二极管（OLED）阵列结构及其相应的制造方法。 每个OLED像素包括衬底上的第一电极，衬底上的第二电极和设置在第一和第二电极之间的有机发射层，以便当通过电极施加合适的电位时发出可见光。 根据本发明的某些实施例，在第一电极的台阶或边缘区域上提供台阶覆盖层或覆盖层，以便减少结构对像素边缘处的击穿敏感性，从而提高产量。

公开(公告)号：US20110097841A1

公开(公告)日：2011-04-28

申请号：US12926943

申请日：2010-12-20

申请人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, JR.

发明人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, JR.

IPC分类号： H01L31/18 ,  H01L21/44

CPC分类号： H01L31/022425 ,  H01L31/02366 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

公开(公告)号：US08415194B2

公开(公告)日：2013-04-09

申请号：US12926943

申请日：2010-12-20

申请人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, Jr.

发明人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, Jr.

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/02366 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

公开(公告)号：US07875945B2

公开(公告)日：2011-01-25

申请号：US12149919

申请日：2008-05-09

申请人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, Jr.

发明人： Alexey Krasnov ,  Willem den Boer ,  Scott V. Thomsen ,  Leonard L. Boyer, Jr.

IPC分类号： H01L31/0232

CPC分类号： H01L31/022425 ,  H01L31/02366 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

摘要翻译： 一种光电器件，包括也可用作后反射器的后电极。 在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置 基质。 换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。 在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。 在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。