公开(公告)号：US11011654B2

公开(公告)日：2021-05-18

申请号：US16295268

申请日：2019-03-07

Applicant: Schott AG

Inventor： Robert Hettler ,  René Nauthe ,  Georg Mittermeier

IPC: H01L31/0203 ,  H01L31/18 ,  H04B10/67 ,  G02B6/42 ,  H01L31/0232

Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter dL shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.

公开(公告)号：US11367692B2

公开(公告)日：2022-06-21

申请号：US15482357

申请日：2017-04-07

Applicant: SCHOTT AG

Inventor： Robert Hettler ,  Reinhard Ecker ,  Martin Lindner-Stettenfeld ,  Georg Mittermeier

IPC: G02B7/02 ,  H01L23/00 ,  H01L23/04 ,  H01L23/06 ,  H01L23/08 ,  H01L31/0203 ,  H01L31/0232 ,  H01S5/02212

Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.

公开(公告)号：US20210033804A1

公开(公告)日：2021-02-04

申请号：US17075743

申请日：2020-10-21

Applicant: Schott AG

Inventor： Robert Hettler ,  Georg Mittermeier

IPC: G02B6/42

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device and a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein. The metal cap includes a window, which is transmissive to electromagnetic radiation, a lateral wall, and an end wall. A portion of the lateral wall and a portion of the end wall are formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header. The thickened lateral wall portion and the thickened end wall portion have an identical wall thickness.

公开(公告)号：US20190280131A1

公开(公告)日：2019-09-12

申请号：US16295268

申请日：2019-03-07

Applicant: Schott AG

Inventor： Robert Hettler ,  René Nauthe ,  Georg Mittermeier

IPC: H01L31/0203 ,  H01L31/18 ,  H01L31/0232 ,  G02B6/42 ,  H04B10/67

Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter & shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.

公开(公告)号：US10908371B2

公开(公告)日：2021-02-02

申请号：US16359577

申请日：2019-03-20

Applicant: Schott AG

Inventor： Robert Hettler ,  Georg Mittermeier

IPC: G02B6/42

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.

公开(公告)号：US20190293882A1

公开(公告)日：2019-09-26

申请号：US16359577

申请日：2019-03-20

Applicant: Schott AG

Inventor： Robert Hettler ,  Georg Mittermeier

IPC: G02B6/42

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.

公开(公告)号：US20170294390A1

公开(公告)日：2017-10-12

申请号：US15482357

申请日：2017-04-07

Applicant: SCHOTT AG

Inventor： Robert Hettler ,  Reinhard Ecker ,  Martin Lindner-Stettenfeld ,  Georg Mittermeier

IPC: H01L23/00 ,  H01L23/08 ,  H01L23/06 ,  H01L23/04

CPC classification number: H01L23/564 ,  H01L23/041 ,  H01L23/06 ,  H01L23/08 ,  H01L31/0203 ,  H01L31/02325 ,  H01S5/02212 ,  H01S5/02288

Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.

公开(公告)号：US09159634B2

公开(公告)日：2015-10-13

申请号：US14158690

申请日：2014-01-17

Applicant: Schott AG

Inventor： Robert Hettler ,  Kenneth Tan ,  Georg Mittermeier ,  Karsten Droegemueller

IPC: H01L23/48 ,  H01L29/32 ,  H01L23/08 ,  H01L23/66 ,  H01L23/64 ,  H01L23/045 ,  H01L23/31

CPC classification number: H01L23/08 ,  H01L23/045 ,  H01L23/3157 ,  H01L23/64 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6622 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/2065 ,  H01L2924/20649 ,  H01L2924/20645 ,  H01L2924/20644 ,  H01L2924/20643 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.

Abstract translation: 提供了在上表面具有接合线的晶体管轮廓外壳。 接合线的长度减小，并且在与接合端相对的端部处具有连续引线，其具有多余的长度。