公开(公告)号：US11508440B1

公开(公告)日：2022-11-22

申请号：US17323708

申请日：2021-05-18

Applicant: SanDisk Technologies LLC

Inventor： Dengtao Zhao ,  Ravi Kumar ,  Chin-Yi Chen ,  Ryohei Shoji

IPC: G11C16/24 ,  G11C16/10 ,  G11C16/14 ,  G11C16/04 ,  G11C16/34 ,  H01L27/11582

Abstract: A nonvolatile memory control method includes a step of writing, repeatedly to a nonvolatile memory cells. The method continues with detecting when writing reaches a writing threshold value. Upon reaching the writing threshold, the method continues with driving a charge to at least one parasitic area intermediate at least two charge storage areas of the nonvolatile memory cells to improve data retention in at least one of the at least two charge storage areas of the nonvolatile memory cells.

公开(公告)号：US20220375524A1

公开(公告)日：2022-11-24

申请号：US17323708

申请日：2021-05-18

Applicant: SanDisk Technologies LLC

Inventor： Dengtao Zhao ,  Ravi Kumar ,  Chin-Yi Chen ,  Ryohei Shoji

IPC: G11C16/10 ,  G11C16/14 ,  G11C16/34 ,  G11C16/04

Abstract: A nonvolatile memory control method includes a step of writing, repeatedly to a nonvolatile memory cells. The method continues with detecting when writing reaches a writing threshold value. Upon reaching the writing threshold, the method continues with driving a charge to at least one parasitic area intermediate at least two charge storage areas of the nonvolatile memory cells to improve data retention in at least one of the at least two charge storage areas of the nonvolatile memory cells.