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Patent Agency Ranking
公开(公告)号：US20130119338A1
公开(公告)日：2013-05-16
申请号：US13734517
申请日：2013-01-04
Applicant: SanDisk 3D LLC
Inventor： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC: H01L45/00
CPC classification number: H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Abstract translation: 提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。 电阻切换材料层：（a）包括由XvOw组成的族的材料，其中X表示由Hf和Zr组成的族的元素，并且其中下标v和w具有形成稳定的非零值 化合物，（b）的厚度为20至65埃。 还提供其他方面。
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公开(公告)号：US09006795B2
公开(公告)日：2015-04-14
申请号：US14180818
申请日：2014-02-14
Applicant: SanDisk 3D LLC
Inventor： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
CPC classification number: H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Abstract translation: 提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。 电阻切换材料层的厚度为20至65埃。 还提供其他方面。
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3.发明申请公开(公告)号：US20130314971A1
公开(公告)日：2013-11-28
申请号：US13678894
申请日：2012-11-16
Applicant: SanDisk 3D LLC
Inventor： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
CPC classification number: H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
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公开(公告)号：US08686476B2
公开(公告)日：2014-04-01
申请号：US13734517
申请日：2013-01-04
Applicant: SanDisk 3D LLC
Inventor： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC: H01L23/52
CPC classification number: H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Abstract translation: 提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。 电阻切换材料层：（a）包括由XvOw组成的族的材料，其中X表示由Hf和Zr组成的族的元素，并且其中下标v和w具有形成稳定的非零值 化合物，（b）的厚度为20至65埃。 还提供其他方面。
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公开(公告)号：US20140158974A1
公开(公告)日：2014-06-12
申请号：US14180818
申请日：2014-02-14
Applicant: SanDisk 3D LLC
Inventor： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC: H01L45/00
CPC classification number: H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Abstract translation: 提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。 电阻切换材料层的厚度为20至65埃。 还提供其他方面。
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