Invention Grant
- Patent Title: Resistance-switching memory cells adapted for use at low voltage
- Patent Title (中): 适于在低电压下使用的电阻切换存储单元
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Application No.: US13734517Application Date: 2013-01-04
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Publication No.: US08686476B2Publication Date: 2014-04-01
- Inventor: Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Public/Granted literature
- US20130119338A1 RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE Public/Granted day:2013-05-16
Information query
IPC分类:
