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公开(公告)号:US20210230127A1
公开(公告)日:2021-07-29
申请号:US17147308
申请日:2021-01-12
发明人: Yoojeong CHOI , Soonhyung KWON , Hyeon PARK , Jaeyeol BAEK , Minsoo KIM , Shinhyo BAE , Daeseok SONG , Dowon AHN
IPC分类号: C07D251/34 , G03F7/11 , G03F7/26 , G03F7/16 , G03F7/004
摘要: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:
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公开(公告)号:US20190317403A1
公开(公告)日:2019-10-17
申请号:US16340728
申请日:2017-06-14
发明人: Shinhyo BAE , Taeho KIM , Yushin PARK , Youjung PARK , Hyunji SONG , Hyunsoo LEE , Hyejin JANG
摘要: An organic layer composition includes an aromatic ring compound, an additive including perfluoroalkyl in the structure, and a solvent, wherein a fluoro (F) group included in the additive is included in an amount of greater than 0 wt % and less than or equal to 30 wt % based on a total weight, 100 wt % of the additive, and a surface tension decrease rate of the additive measured according to Condition 1 is 0.1% to 30%. The definition of Condition 1 is the same as described in the specification.
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公开(公告)号:US20230026579A1
公开(公告)日:2023-01-26
申请号:US17733743
申请日:2022-04-29
发明人: Ran NAMGUNG , Shinhyo BAE , Hyeon PARK , Daeseok SONG , Minki CHON , Jun Soo KIM , Hyun-Woo KIM , Hyun-Ji SONG , Young Joo CHOI , Suk-Koo HONG
IPC分类号: G03F7/11 , C08F220/28 , C09D133/16 , H01L21/027 , H01L21/311
摘要: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.
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公开(公告)号:US20210240082A1
公开(公告)日:2021-08-05
申请号:US17153095
申请日:2021-01-20
发明人: Jaeyeol BAEK , Soonhyung KWON , Minsoo KIM , Hyeon PARK , Shinhyo BAE , Daeseok SONG , Yoojeong CHOI
IPC分类号: G03F7/11 , G03F7/26 , G03F7/004 , G03F7/16 , C07D251/32
摘要: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.
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公开(公告)号:US20230288809A1
公开(公告)日:2023-09-14
申请号:US18006135
申请日:2021-11-11
发明人: Yoojeong CHOI , Soonhyung KWON , Minsoo KIM , Seongjin KIM , Jaeyeol BAEK , Hwayoung JIN , Hyeon PARK , Shinhyo BAE , Daeseok SONG , Minki CHON
IPC分类号: G03F7/11 , C08G75/045 , C08F26/06 , G03F7/38
CPC分类号: G03F7/11 , C08G75/045 , C08F26/06 , G03F7/38
摘要: Provided are a resist underlayer composition including a polymer having a ring backbone including two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, and a solvent; and a method of forming patterns using the resist underlayer composition:
The definitions of Chemical Formula 1 are as described in the detailed description.-
公开(公告)号:US20220075266A1
公开(公告)日:2022-03-10
申请号:US17419657
申请日:2020-03-23
发明人: Yoojeong CHOI , Soonhyung KWON , Minsoo KIM , Hyeon PARK , Shinhyo BAE , Jaeyeol BAEK
摘要: The present invention relates to a resist underlayer composition and a method of forming patterns using the same.
According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.
Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.-
公开(公告)号:US20200285153A1
公开(公告)日:2020-09-10
申请号:US16789233
申请日:2020-02-12
发明人: Hyeon PARK , Yoojeong CHOI , Soonhyung KWON , Shinhyo BAE , Jaeyeol BAEK
摘要: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent and a method of forming patterns using the resist underlayer composition: In Chemical Formula 1, at least one of A1 and A2 is a group represented by Chemical Formula A:
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公开(公告)号:US20200081346A1
公开(公告)日:2020-03-12
申请号:US16558486
申请日:2019-09-03
发明人: Jaeyeol BAEK , Shinhyo BAE , Yoojeong CHOI , Soonhyung KWON , Hyeon PARK
摘要: A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,
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公开(公告)号:US20190129307A1
公开(公告)日:2019-05-02
申请号:US16174524
申请日:2018-10-30
发明人: Soonhyung KWON , Shinhyo BAE , Hyeon PARK , Jaeyeol BAEK , Beomjun JOO , Yoojeong CHOI , Kwen-Woo HAN
IPC分类号: G03F7/11 , H01L21/027 , C08G12/34 , C09D161/30 , G03F7/16 , G03F7/20 , G03F7/30 , H01L21/311
摘要: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,
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公开(公告)号:US20230273523A1
公开(公告)日:2023-08-31
申请号:US18311627
申请日:2023-05-03
发明人: Jaeyeol BAEK , Soonhyung KWON , Minsoo KIM , Hyeon PARK , Shinhyo BAE , Daeseok SONG , Yoojeong CHOI
IPC分类号: G03F7/11 , G03F7/26 , C07D251/32 , G03F7/16 , G03F7/004
CPC分类号: G03F7/11 , G03F7/26 , C07D251/32 , G03F7/168 , G03F7/0045
摘要: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.
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