- 专利标题： COMPOSITION FOR RESIST UNDERLAYER, AND PATTERN FORMING METHOD USING SAME
-
申请号： US17419657申请日： 2020-03-23
-
公开(公告)号： US20220075266A1公开(公告)日： 2022-03-10
- 发明人: Yoojeong CHOI , Soonhyung KWON , Minsoo KIM , Hyeon PARK , Shinhyo BAE , Jaeyeol BAEK
- 申请人： Samsung SDI Co., Ltd.
- 申请人地址： KR Yongin si, Gyeonggi-do
- 专利权人： Samsung SDI Co., Ltd.
- 当前专利权人： Samsung SDI Co., Ltd.
- 当前专利权人地址： KR Yongin si, Gyeonggi-do
- 优先权： KR10-2019-0037030 20190329
- 国际申请： PCT/KR2020/003965 WO 20200323
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/16 ; G03F7/004
摘要：
The present invention relates to a resist underlayer composition and a method of forming patterns using the same.
According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.
Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.
According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.
Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.
公开/授权文献
信息查询
IPC分类:
