发明公开
- 专利标题： RESIST UNDERLAYER COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
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申请号： US18311627申请日： 2023-05-03
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公开(公告)号： US20230273523A1公开(公告)日： 2023-08-31
- 发明人: Jaeyeol BAEK , Soonhyung KWON , Minsoo KIM , Hyeon PARK , Shinhyo BAE , Daeseok SONG , Yoojeong CHOI
- 申请人： Samsung SDI Co., Ltd.
- 申请人地址： KR Yongin-si
- 专利权人： Samsung SDI Co., Ltd.
- 当前专利权人： Samsung SDI Co., Ltd.
- 当前专利权人地址： KR Yongin-si
- 优先权： KR 20200011629 2020.01.31
- 分案原申请号： US17153095 2021.01.20
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/26 ; C07D251/32 ; G03F7/16 ; G03F7/004
摘要：
A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.
公开/授权文献
- US1691386A Surgical instrument for making ligatures 公开/授权日：1928-11-13
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