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    SEMICONDUCTOR DEVICES
    1.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220037495A1

    公开(公告)日：2022-02-03

    申请号：US17209290

    申请日：2021-03-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MYUNG GIL KANG ,  DONG WON KIM ,  WOO SEOK PARK ,  KEUN HWI CHO ,  SUNG GI HUR

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/786 ,  H01L29/06

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160372474A1

    公开(公告)日：2016-12-22

    申请号：US15249518

    申请日：2016-08-29

    Applicant: Samsung Electronics Co. Ltd.

    Inventor： Junggil YANG ,  SANGSU KIM ,  TaeYong KWON ,  SUNG GI HUR

    IPC: H01L27/092 ,  H01L21/306 ,  H01L21/8238

    CPC classification number: H01L27/0924 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L29/1054 ,  H01L29/42392

    Abstract: A method of fabricating a semiconductor device includes preparing a substrate including a first region and a second region, sequentially forming a first semiconductor layer and a second semiconductor layer on the first and second regions, patterning the first and second semiconductor layers to form a lower semiconductor pattern and an upper semiconductor pattern on each of the first and second regions, selectively removing the lower semiconductor pattern on the second region to form a gap region, and forming gate electrodes at the first and second regions, respectively.

    Abstract translation: 制造半导体器件的方法包括制备包括第一区域和第二区域的衬底，在第一和第二区域上依次形成第一半导体层和第二半导体层，图案化第一和第二半导体层以形成下部半导体 图案和上半导体图案，选择性地去除第二区域上的下半导体图案以形成间隙区域，以及分别在第一和第二区域形成栅电极。

    SEMICONDUCTOR DEVICES
    4.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20250072053A1

    公开(公告)日：2025-02-27

    申请号：US18947664

    申请日：2024-11-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MYUNG GIL KANG ,  DONG WON KIM ,  WOO SEOK PARK ,  KEUN HWI CHO ,  SUNG GI HUR

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

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