公开(公告)号：US09960169B2

公开(公告)日：2018-05-01

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  In-Seak Hwang

IPC: H01L27/108 ,  H01L21/762 ,  H01L21/3105

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

公开(公告)号：US20170062437A1

公开(公告)日：2017-03-02

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底上形成掩模图案。 在半导体衬底上形成有机层以覆盖掩模图案。 使用抛光组合物对有机层的上部进行平面化处理。 抛光组合物包括氧化剂并且没有磨料颗粒。

公开(公告)号：US09994737B2

公开(公告)日：2018-06-12

申请号：US15389800

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: H01L21/02 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/768

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

公开(公告)号：US09728446B2

公开(公告)日：2017-08-08

申请号：US14938941

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingoo Kang ,  Dong-Min Kang ,  Sangkyun Kim ,  Yun-Jeong Kim ,  Jungsik Choi ,  Young Taek Hong

IPC: H01L21/768 ,  C11D11/00 ,  C11D7/06 ,  C11D7/50 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  C11D7/32 ,  B08B1/00 ,  B08B3/12 ,  B08B7/04 ,  H01L27/11582

CPC classification number: H01L21/76814 ,  B08B1/002 ,  B08B3/12 ,  B08B7/04 ,  C11D7/06 ,  C11D7/3245 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02065 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76877 ,  H01L27/11582

Abstract: Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

公开(公告)号：US20170107405A1

公开(公告)日：2017-04-20

申请号：US15389800

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

公开(公告)号：US20160141182A1

公开(公告)日：2016-05-19

申请号：US14886161

申请日：2015-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  Sanghyun Park ,  Se Jung Park ,  Bo Hyeok Choi

IPC: H01L21/308 ,  H01L21/304 ,  C09G1/02

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/823821 ,  H01L29/1054

Abstract: Provided are slurry compositions for polishing a germanium-containing layer and methods of fabricating a semiconductor device using the same. The slurry composition may include a polishing particle, an oxidizing agent, a polishing accelerator, and a selectivity control agent. The oxidizing agent may include at least one selected from the group consisting of superoxide, dioxygenyl, ozone, ozonide, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, and peroxide.

Abstract translation: 提供了用于研磨含锗层的浆料组合物和使用其的半导体器件的制造方法。 浆料组合物可以包括抛光颗粒，氧化剂，抛光促进剂和选择性控制剂。 氧化剂可以包括选自超氧化物，二氧基，臭氧，臭氧化物，亚氯酸盐，氯酸盐，高氯酸盐，卤素化合物，硝酸，硝酸盐，次氯酸盐，次卤酸盐和过氧化物中的至少一种。

公开(公告)号：US20160137880A1

公开(公告)日：2016-05-19

申请号：US14864322

申请日：2015-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

Abstract translation: 提供了用于抛光SOH有机层的浆料化合物和使用其的半导体器件的制造方法。 浆料化合物可以包括抛光颗粒，包括选自硝酸盐，硫酸盐，氯酸盐，高氯酸盐，氯和过氧化物中的至少一种的氧化剂和抛光促进剂。