公开(公告)号：US20160225621A1

公开(公告)日：2016-08-04

申请号：US15097369

申请日：2016-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： YuJeong SEO ,  JinTaek PARK ,  Youngwoo PARK

IPC: H01L21/02 ,  H01L29/10 ,  H01L29/04 ,  H01L29/16 ,  H01L27/115 ,  H01L29/792

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/16 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The inventive concepts provide semiconductor devices and methods of fabricating the same. According to the method, sub-stack structures having a predetermined height and active holes are repeatedly stacked. Thus, cell dispersion may be improved, and various errors such as a not-open error caused in an etching process may be prevented. A grain size of an active pillar used as channels may be increased or maximized using a metal induced lateral crystallization method, so that a cell current may be improved. A formation position of a metal silicide layer including a crystallization inducing metal may be controlled such that a concentration grade of the crystallization inducing metal may be controlled depending on a position within the active pillar.

Abstract translation: 本发明构思提供半导体器件及其制造方法。 根据该方法，重复堆叠具有预定高度和有效孔的子堆叠结构。 因此，可以改善电池分散，并且可以防止在蚀刻工艺中引起的各种误差，例如不开放的误差。 作为通道使用的活性柱的粒径可以使用金属诱导横向结晶法增加或最大化，从而可提高电池电流。 可以控制包括结晶诱导金属的金属硅化物层的形成位置，使得可以根据活性柱中的位置来控制结晶诱导金属的浓度等级。