公开(公告)号：US20130270569A1

公开(公告)日：2013-10-17

申请号：US13915284

申请日：2013-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chongkwang Chang ,  Youngjoon Moon ,  Duck-nam Kim ,  Yeong-Jong Jeong

IPC: H01L29/04

CPC classification number: H01L29/04 ,  H01L21/28247 ,  H01L21/32137 ,  H01L21/32138 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4232 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.

Abstract translation: 半导体器件及其制造方法包括依次堆叠在半导体衬底上的半导体衬底，高k电介质图案和含金属图案，包括多晶半导体并设置在含金属图案上的栅极图案， 以及设置在所述栅极图案上的保护层，其中所述保护层包括所述多晶半导体的氧化物，氮化物和/或氧氮化物。

公开(公告)号：US09608054B2

公开(公告)日：2017-03-28

申请号：US14933537

申请日：2015-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chongkwang Chang ,  Youngjoon Moon ,  Duck-nam Kim ,  Yeong-Jong Jeong

IPC: H01L29/04 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/04 ,  H01L21/28247 ,  H01L21/32137 ,  H01L21/32138 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4232 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.

公开(公告)号：US09419072B2

公开(公告)日：2016-08-16

申请号：US13915284

申请日：2013-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chongkwang Chang ,  Youngjoon Moon ,  Duck-nam Kim ,  Yeong-Jong Jeong

IPC: H01L21/336 ,  H01L29/04 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L29/04 ,  H01L21/28247 ,  H01L21/32137 ,  H01L21/32138 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4232 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.

公开(公告)号：US20160056259A1

公开(公告)日：2016-02-25

申请号：US14933537

申请日：2015-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chongkwang Chang ,  Youngjoon Moon ,  Duck-nam Kim ,  Yeong-Jong Jeong

IPC: H01L29/51 ,  H01L29/423

CPC classification number: H01L29/04 ,  H01L21/28247 ,  H01L21/32137 ,  H01L21/32138 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4232 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.