公开(公告)号：US11114535B2

公开(公告)日：2021-09-07

申请号：US16152956

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-yoon Ahn ,  Sang-hyun Lee ,  Sung-woo Kang ,  Hong-sik Shin ,  Seong-han Oh ,  Young-mook Oh ,  In-keun Lee

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/033 ,  H01L27/088 ,  H01L29/165 ,  H01L29/45 ,  H01L21/768 ,  H01L21/311 ,  H01L29/66 ,  H01L21/02 ,  H01L29/08

Abstract: A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.

公开(公告)号：US20190305098A1

公开(公告)日：2019-10-03

申请号：US16152956

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-yoon Ahn ,  Sang-hyun Lee ,  Sung-woo Kang ,  Hong-sik Shin ,  Seong-han Oh ,  Young-mook Oh ,  In-keun Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/8234

Abstract: A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.