公开(公告)号：US20230402500A1

公开(公告)日：2023-12-14

申请号：US18107138

申请日：2023-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Jin CHO ,  Young-Lim PARK ,  Kyoo Ho JUNG

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/482 ,  H10B12/488 ,  H10B12/315

Abstract: A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.

公开(公告)号：US20220238691A1

公开(公告)日：2022-07-28

申请号：US17720198

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20230402503A1

公开(公告)日：2023-12-14

申请号：US18182507

申请日：2023-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Lim PARK ,  Woo Seop LIM ,  Ji Min CHAE ,  Chang Mu AN ,  Jae Soon LIM

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H10B12/315 ,  H10B12/033

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.

公开(公告)号：US20210359102A1

公开(公告)日：2021-11-18

申请号：US17390864

申请日：2021-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20210013319A1

公开(公告)日：2021-01-14

申请号：US17035675

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20200013853A1

公开(公告)日：2020-01-09

申请号：US16573156

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  Sangyeol KANG ,  Suhwan KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20180315811A1

公开(公告)日：2018-11-01

申请号：US15938234

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  SANGYEOL KANG ,  SUHWAN KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02244 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L28/91

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20210296429A1

公开(公告)日：2021-09-23

申请号：US17342610

申请日：2021-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim PARK ,  Se Hyoung AHN ,  Sang Yeol KANG ,  Chang Mu AN ,  Kyoo Ho JUNG

IPC: H01L49/02 ,  H01L27/11507 ,  H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.

公开(公告)号：US20220085010A1

公开(公告)日：2022-03-17

申请号：US17361418

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Young-Lim PARK ,  Changmu AN ,  Hongseon SONG ,  Yukyung SHIN

IPC: H01L27/08 ,  H01L49/02

Abstract: Disclosed are semiconductor devices and fabrication methods for the same. The semiconductor devices may include a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked on a semiconductor substrate. The bottom electrode includes a first doping region in contact with the dielectric layer, a main region spaced apart from the dielectric layer by the first doping region intervening therebetween, and a second doping region between the first doping region and the main region. Each of the first and second doping regions includes oxygen and a doping metal. In some embodiments, the second doping region may include nitrogen. The main region may be devoid of the doping metal. An amount of oxygen in the second doping region is less than an amount of oxygen in the first doping region.

公开(公告)号：US20210391333A1

公开(公告)日：2021-12-16

申请号：US17412801

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Younsoo KIM ,  Young-Lim PARK ,  Jeong-Gyu SONG ,  Se Hyoung AHN ,  Changmu AN

IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.