公开(公告)号：US20220173108A1

公开(公告)日：2022-06-02

申请号：US17372880

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young LEE ,  Do Hyung KIM ,  Taek Jung KIM ,  Seung Jong PARK ,  Jae Wha PARK ,  Youn Jae CHO

IPC: H01L27/108 ,  H01L23/532 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

公开(公告)号：US20230371237A1

公开(公告)日：2023-11-16

申请号：US18226891

申请日：2023-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young LEE ,  Do Hyung KIM ,  Taek Jung KIM ,  Seung Jong PARK ,  Jae Wha PARK ,  Youn Jae CHO

IPC: H10B12/00 ,  H01L23/528 ,  H01L23/532

CPC classification number: H10B12/315 ,  H01L23/528 ,  H01L23/53266 ,  H10B12/34 ,  H10N50/01

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

公开(公告)号：US20180053769A1

公开(公告)日：2018-02-22

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon KIM ,  Eun Tae KIM ,  Seong Hun PARK ,  Youn Jae CHO ,  Hee Sook PARK ,  Woong Hee SOHN ,  Jin Ho OH

IPC: H01L27/108

CPC classification number: H01L27/10876 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10891 ,  H01L29/4236

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.