公开(公告)号：US20180053769A1

公开(公告)日：2018-02-22

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon KIM ,  Eun Tae KIM ,  Seong Hun PARK ,  Youn Jae CHO ,  Hee Sook PARK ,  Woong Hee SOHN ,  Jin Ho OH

IPC: H01L27/108

CPC classification number: H01L27/10876 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10891 ,  H01L29/4236

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.