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公开(公告)号：US20180053769A1
公开(公告)日：2018-02-22
申请号：US15634066
申请日：2017-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hoon KIM , Eun Tae KIM , Seong Hun PARK , Youn Jae CHO , Hee Sook PARK , Woong Hee SOHN , Jin Ho OH
IPC: H01L27/108
CPC classification number: H01L27/10876 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10888 , H01L27/10891 , H01L29/4236
Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.
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公开(公告)号：US20240130126A1
公开(公告)日：2024-04-18
申请号：US18349460
申请日：2023-07-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yeong Dong MUN , Seong Hun PARK , Hauk HAN , Seong Jin KIM
Abstract: A non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.
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