公开(公告)号：US20220301628A1

公开(公告)日：2022-09-22

申请号：US17834024

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C11/56

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20180374869A1

公开(公告)日：2018-12-27

申请号：US15993756

申请日：2018-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-soo KIM ,  Yong-seok KIM ,  Tae-hun KIM ,  Min-kyung BAE ,  Jae-hoon JANG ,  Kohji KANAMORI

IPC: H01L27/11582 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L29/0847 ,  H01L29/7827

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.

公开(公告)号：US20250014646A1

公开(公告)日：2025-01-09

申请号：US18892390

申请日：2024-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L29/788 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20190392902A1

公开(公告)日：2019-12-26

申请号：US16553891

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20210217477A1

公开(公告)日：2021-07-15

申请号：US17220107

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C11/56

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20190355744A1

公开(公告)日：2019-11-21

申请号：US16526139

申请日：2019-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-soo KIM ,  Yong-seok KIM ,  Tae-hun KIM ,  Min-kyung BAE ,  Jae-hoon JANG ,  Kohji KANAMORI

IPC: H01L27/11582 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.

公开(公告)号：US20180268907A1

公开(公告)日：2018-09-20

申请号：US15870989

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.