公开(公告)号：US20170309724A1

公开(公告)日：2017-10-26

申请号：US15404659

申请日：2017-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-ho JEON ,  Dae-hyun JANG ,  Seung-seok HA ,  Young-ju Park ,  Sun-ki Min

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/321 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L29/66545 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/6656

Abstract: A method of manufacturing a semiconductor device includes forming dummy gate structures including a dummy gate insulating layer and dummy gate electrodes, on a first region of a semiconductor substrate, the first region including a patterning region, forming spacers on two side walls of each of the dummy gate structures, forming an interlayer insulating layer on the semiconductor substrate and the dummy gate structures, forming a protective insulating layer on a second region of the semiconductor substrate, the second region including a non-patterning region, forming a liner layer on the protective insulating layer, planarizing the interlayer insulating layer by using the liner layer as an etching mask to expose top surfaces of the dummy gate structures, forming openings by removing the dummy gate structures to expose the semiconductor substrate between the spacers, and forming gate structures including a gate insulating layer and metal gate electrodes, in the openings.

公开(公告)号：US20250126854A1

公开(公告)日：2025-04-17

申请号：US18989332

申请日：2024-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun PARK ,  Kye-hyun BAEK ,  Yong-ho JEON ,  Cheol KIM ,  Sung-il PARK ,  Yun-il LEE ,  Hyung-suk LEE

IPC: H10D62/10 ,  H10D30/01 ,  H10D84/01 ,  H10D84/03 ,  H10D84/83

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

公开(公告)号：US20220077285A1

公开(公告)日：2022-03-10

申请号：US17528251

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun PARK ,  Kye-hyun BAEK ,  Yong-ho JEON ,  Cheol KIM ,  Sung-il PARK ,  Yun-il LEE ,  Hyung-suk LEE

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.