公开(公告)号：US12213304B2

公开(公告)日：2025-01-28

申请号：US17825441

申请日：2022-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teawon Kim ,  Yurim Kim ,  Seohee Park ,  Kong-Soo Lee ,  Yong Suk Tak

IPC: H01L27/108 ,  H10B12/00

Abstract: A semiconductor device includes: a substrate; a conductive line extending on the substrate in a first horizontal direction; an isolation insulating layer extending on the substrate and the conductive line in a second horizontal direction intersecting with the first horizontal direction, and defining a channel trench extending through the isolation insulating layer from an upper surface of the isolation insulating layer to a lower surface of the isolation insulating layer; a crystalline oxide semiconductor layer extending along at least a portion of an inner side surface of the channel trench and at least a portion of a bottom surface of the channel trench and coming in contact with the conductive line; and a gate electrode extending on the crystalline oxide semiconductor layer inside the channel trench in the second horizontal direction.

公开(公告)号：US10403739B2

公开(公告)日：2019-09-03

申请号：US15865531

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tea Won Kim ,  Yong Suk Tak ,  Ki Yeon Park

IPC: H01L29/66 ,  H01L29/06

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

公开(公告)号：US10008575B2

公开(公告)日：2018-06-26

申请号：US15298746

申请日：2016-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Suh ,  Yong Suk Tak ,  Gi Gwan Park ,  Mi Seon Park ,  Moon Seung Yang ,  Seung Hun Lee ,  Poren Tang

IPC: H01L29/423 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L29/42376 ,  H01L23/5283 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/7831 ,  H01L29/78696

Abstract: A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern.

公开(公告)号：US20170330905A1

公开(公告)日：2017-11-16

申请号：US15397065

申请日：2017-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Suk Tak ,  Hong Bum Park ,  Won Oh Seo ,  Guk Hyon Yon ,  Ju Ri Lee

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14627

Abstract: A pixel array may include an array of microlenses, an array of photodetectors, and an array of color filters. The array of microlenses concentrate incoming light through respective filters in the array of color filters to respective photodetectors in the array of photodetectors. An anti-reflective layer is included between the photodetectors and color filters. The anti-reflective layer includes a first layer having a first index of refraction, a second layer closer to the color filter than the first layer having a second, higher, index of refraction, and a lattice adjusting layer between the first and second layers. The second layer includes a rutile phase TiO2 layer and the lattice adjusting layer includes a crystalline material having a lattice constant similar to that of the rutile phase TiO2 layer.