公开(公告)号：US09595341B2

公开(公告)日：2017-03-14

申请号：US14196366

申请日：2014-03-04

Applicant: SAMSUNG Electronics Co., Ltd.

Inventor： Jaehong Kim ,  Kijun Lee ,  Yong June Kim ,  Heeseok Eun

IPC: G11C16/04 ,  G11C16/34 ,  G06F12/02 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3431 ,  G06F12/0238 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3427

Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.

Abstract translation: 提供了一种存储器系统及其操作方法。 操作方法用不同的读取电压至少一次读取观察存储器单元以配置第一读取数据符号，至少用不同的读取电压读取与观察存储器单元相邻的多个干扰存储器单元以配置第二读取数据 符号，并且基于第一读取数据符号和第二读取数据符号确定观察存储器单元的逻辑值。

公开(公告)号：US08839080B2

公开(公告)日：2014-09-16

申请号：US14089361

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong June Kim ,  Junjin Kong ,  KyoungLae Cho

IPC: H03M13/00 ,  G11C16/34 ,  G06F11/10 ,  G11C11/56

CPC classification number: G06F11/1072 ,  G06F11/1048 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/349

Abstract: Methods of operating nonvolatile memory devices include testing strings of nonvolatile memory cells in the memory device to identify at least one weak string therein having a higher probability of yielding erroneous read data error relative to other strings. An identity of the at least one weak string may be stored as weak column information, which may be used to facilitate error detection and correction operations. In particular, an error correction operation may be performed on bits of data read from the strings using an algorithm that modifies a weighting of the reliability of one or more data bits in the bits of data based on the weak column information. More specifically, an algorithm may be used that interprets a bit of data read from the at least one weak string as having a relatively reduced reliability relative to other ones of the data bits.

Abstract translation: 操作非易失性存储器件的方法包括测试存储器件中的非易失性存储器单元的串，以识别其中至少一个弱串，其中相对于其它串产生错误的读数据误差的概率较高。 至少一个弱字符串的身份可以存储为弱列信息，其可以用于促进错误检测和校正操作。 特别地，可以使用基于弱列信息修改数据位中的一个或多个数据位的可靠性的加权的算法来对从字符串读取的数据的位进行纠错操作。 更具体地，可以使用解释从至少一个弱串读取的数据位相对于其他数据位相对降低的可靠性的算法。

公开(公告)号：US20140082458A1

公开(公告)日：2014-03-20

申请号：US14089361

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong June Kim ,  Junjin Kong ,  KyoungLae Cho

IPC: G06F11/10

CPC classification number: G06F11/1072 ,  G06F11/1048 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/349

Abstract: Methods of operating nonvolatile memory devices include testing strings of nonvolatile memory cells in the memory device to identify at least one weak string therein having a higher probability of yielding erroneous read data error relative to other strings. An identity of the at least one weak string may be stored as weak column information, which may be used to facilitate error detection and correction operations. In particular, an error correction operation may be performed on bits of data read from the strings using an algorithm that modifies a weighting of the reliability of one or more data bits in the bits of data based on the weak column information. More specifically, an algorithm may be used that interprets a bit of data read from the at least one weak string as having a relatively reduced reliability relative to other ones of the data bits.

Abstract translation: 操作非易失性存储器件的方法包括测试存储器件中的非易失性存储器单元的串，以识别其中至少一个弱串，其中相对于其它串产生错误的读数据误差的概率较高。 至少一个弱字符串的身份可以存储为弱列信息，其可以用于促进错误检测和校正操作。 特别地，可以使用基于弱列信息修改数据位中的一个或多个数据位的可靠性的加权的算法来对从字符串读取的数据的位进行纠错操作。 更具体地，可以使用解释从至少一个弱串读取的数据位相对于其他数据位相对降低的可靠性的算法。