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    MEMORY DEVICE INCLUDING VOLTAGE GENERATING CIRCUIT AND OPERATION METHOD OF MEMORY DEVICE
    2.
    发明申请
    MEMORY DEVICE INCLUDING VOLTAGE GENERATING CIRCUIT AND OPERATION METHOD OF MEMORY DEVICE 有权

    公开(公告)号：US20250087256A1

    公开(公告)日：2025-03-13

    申请号：US18418001

    申请日：2024-01-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yoonjae Lee ,  Yeji Shin ,  Sang-Wan Nam ,  Sang-Won Shim

    IPC: G11C7/10

    Abstract: Disclosed is a memory device which includes a memory cell array that includes a plurality of memory cells, and a peripheral circuit configured to perform a plurality of operations on the memory cell array by using a plurality of operating voltages. The peripheral circuit includes a voltage generating circuit including a first pump block, a second pump block, and a common pump block. The voltage generating circuit connects the first pump block and the common pump block in parallel to generate a first operating voltage among the plurality of operating voltages and connects the common pump block and the second pump block in series to generate a second operating voltage among the plurality of operating voltages. The common pump block is configurable to match the first pump block, the second pump block, or both, as needed.

    Charge pump having switch circuits for blocking leakage current during sudden power-off, and flash memory including the same
    3.
    发明授权
    Charge pump having switch circuits for blocking leakage current during sudden power-off, and flash memory including the same 有权

    公开(公告)号：US12272419B2

    公开(公告)日：2025-04-08

    申请号：US18217087

    申请日：2023-06-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yeji Shin ,  Tae-Hong Kwon ,  Yoonjae Lee ,  Seokin Hong

    IPC: G11C5/14 ,  G11C16/12 ,  G11C16/30

    Abstract: Disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. The first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. The first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.

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