公开(公告)号：US20200006231A1

公开(公告)日：2020-01-02

申请号：US16561008

申请日：2019-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOO SONG ,  Ye-Ro LEE ,  Kwangtae HWANG ,  Kwangmin KIM ,  YONG KWAN KIM ,  JIYOUNG KIM

IPC: H01L23/532 ,  H01L27/02 ,  H01L27/108

Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.

公开(公告)号：US20210375764A1

公开(公告)日：2021-12-02

申请号：US17399043

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOO SONG ,  Ye-Ro LEE ,  Kwangtae HWANG ,  Kwangmin KIM ,  YONG KWAN KIM ,  JIYOUNG KIM

IPC: H01L23/532 ,  H01L27/02 ,  H01L27/108 ,  H01L21/768

Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.

公开(公告)号：US20180174971A1

公开(公告)日：2018-06-21

申请号：US15706655

申请日：2017-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOO SONG ,  Ye-Ro LEE ,  Kwangtae HWANG ,  Kwangmin KIM ,  YONG KWAN KIM ,  JIYOUNG KIM

IPC: H01L23/532 ,  H01L27/108 ,  H01L27/02

Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.