公开(公告)号：US20180053859A1

公开(公告)日：2018-02-22

申请号：US15359480

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wei-E Wang ,  Mark S. Rodder ,  Robert M. Wallace ,  Xiaoye Qin

IPC: H01L29/786 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/78681 ,  H01L21/02172 ,  H01L21/02293 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.

公开(公告)号：US11081590B2

公开(公告)日：2021-08-03

申请号：US16591458

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd. ,  Board of Regents, The University of Texas System

Inventor： Wei-E Wang ,  Mark S. Rodder ,  Robert M. Wallace ,  Xiaoye Qin

IPC: H01L29/10 ,  H01L29/40 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.

公开(公告)号：US20200035838A1

公开(公告)日：2020-01-30

申请号：US16591458

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd. ,  Board of Regents, The University of Texas System

Inventor： Wei-E Wang ,  Mark S. Rodder ,  Robert M. Wallace ,  Xiaoye Qin

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.

公开(公告)号：US10475930B2

公开(公告)日：2019-11-12

申请号：US15359480

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd. ,  Board of Regents, The University of Texas System

Inventor： Wei-E Wang ,  Mark S. Rodder ,  Robert M. Wallace ,  Xiaoye Qin

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.