公开(公告)号：US11456236B2

公开(公告)日：2022-09-27

申请号：US16722418

申请日：2019-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Sung Yang ,  Joon-Sung Lim ,  Sung-Min Hwang ,  Ji-Young Kim ,  Ji-Won Kim

IPC: H01L23/48 ,  H01L27/11582 ,  H01L27/11575

Abstract: A vertical semiconductor device including a plurality of vertical memory cells on an upper surface of a first substrate, an adhesive layer on a lower surface of the first substrate that is opposite to the upper surface of the first substrate, a second substrate having first peripheral circuits thereon, a lower insulating interlayer on the second substrate, and a plurality of wiring structures electrically connecting the vertical memory cells and the first peripheral circuits. A lower surface of the adhesive layer and an upper surface of the lower insulating interlayer may be in contact with each other.

公开(公告)号：US10546876B2

公开(公告)日：2020-01-28

申请号：US16021775

申请日：2018-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Min Lee ,  Woo-Sung Yang ,  Kwan-Yong Kim

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.

公开(公告)号：US20180308860A1

公开(公告)日：2018-10-25

申请号：US16021775

申请日：2018-06-28

Applicant: Samsung Electronics Co., Ltd

Inventor： Hyun-Min Lee ,  Woo-Sung Yang ,  Kwan-Yong Kim

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/1157 ,  H01L27/11575

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.