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公开(公告)号:US10546876B2
公开(公告)日:2020-01-28
申请号:US16021775
申请日:2018-06-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun-Min Lee , Woo-Sung Yang , Kwan-Yong Kim
IPC: H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L27/11575
Abstract: Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.
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公开(公告)号:US20180308860A1
公开(公告)日:2018-10-25
申请号:US16021775
申请日:2018-06-28
Applicant: Samsung Electronics Co., Ltd
Inventor: Hyun-Min Lee , Woo-Sung Yang , Kwan-Yong Kim
IPC: H01L27/11582 , H01L27/11573 , H01L27/1157 , H01L27/11575
CPC classification number: H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L27/11575
Abstract: Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.
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