Invention Grant
- Patent Title: Semiconductor devices including stacked electrodes
-
Application No.: US16021775Application Date: 2018-06-28
-
Publication No.: US10546876B2Publication Date: 2020-01-28
- Inventor: Hyun-Min Lee , Woo-Sung Yang , Kwan-Yong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2016-0023243 20160226
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L27/11573 ; H01L27/11575

Abstract:
Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.
Public/Granted literature
- US20180308860A1 SEMICONDUCTOR DEVICES INCLUDING STACKED ELECTRODES Public/Granted day:2018-10-25
Information query
IPC分类: