公开(公告)号：US10566039B2

公开(公告)日：2020-02-18

申请号：US16043474

申请日：2018-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Wan Nam ,  Dong Hun Kwak ,  Wan Dong Kim ,  Chi Weon Yoon

IPC: G11C8/00 ,  G11C8/14 ,  H01L27/11582 ,  G11C16/26 ,  G11C16/14 ,  G11C16/08 ,  H01L27/1157

Abstract: A memory device includes a memory cell array including a plurality of word lines, a first string select line above the plurality of word lines, and a second string select line between the first string select line and the plurality of word lines, and a controller. During an operation of reading data of a first memory cell connected to a first word line among the plurality of word lines, the controller is to supply a first voltage to the first string select line and to supply a second voltage to the second string select line, the second voltage being greater than the first voltage.