摘要:
An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.
摘要:
A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.
摘要:
An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.
摘要:
In a method of operating a depth pixel included in a three-dimensional (3D) image sensor, a plurality of sampling values are obtained by sampling a reception light reflected by an object based on a transfer control signal having a first initial activation level. The depth pixel includes a photo detection region, a transfer gate and a floating diffusion region. The transfer control signal is applied to the transfer gate. A first final activation level of the transfer control signal is determined based on the plurality of sampling values and at least one reference value. A distance between the depth pixel and the object is calculated based on the reception light and the transfer control signal having the first final activation level.
摘要:
A depth pixel includes a photo detection unit, an ambient light removal current source, a driving transistor and a select transistor. The photo detection unit is configured to generate a light current based on a received light reflected from a subject, the received light including an ambient light component. The ambient light removal current source configured to generate a compensation current indicating the ambient light component in response to a power supply and at least one compensation control signal. The driving transistor is configured to amplify an effective voltage corresponding to the light current and the compensation current. The select transistor configured to output the amplified effective voltage in response to a selection signal, the amplified effective voltage indicating a depth of the subject.
摘要:
An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.
摘要:
An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.
摘要:
An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.
摘要:
The Time-of-Flight (TOF) technique is combined with analog amplitude modulation within each pixel in an image sensor. The pixel may be a two-tap pixel or a one-tap pixel. Two photoelectron receiver circuits in the pixel receive respective analog modulating signals. The distribution of the received photoelectron charge between these two circuits is controlled by the difference (or ratio) of the two analog modulating voltages. The differential signals generated in this manner within the pixel are modulated in time domain for TOF measurement. Thus, the TOF information is added to the received light signal by the analog domain-based single-ended to differential converter inside the pixel itself. The TOF-based measurement of range and its resolution are controllable by changing the duration of modulation. An autonomous navigation system with these features may provide improved vision for drivers under difficult driving conditions like low light, fog, bad weather, or strong ambient light.
摘要:
A unit pixel of a stacked image sensor includes a stacked photoelectric conversion unit, a first and second signal generating units. The stacked photoelectric conversion unit includes first, second and third photoelectric conversion elements that are stacked on each other. The first, second and third photoelectric conversion elements collect first, second and third photocharges based on first, second and third components of incident light. The first signal generating unit generates a first pixel signal based on the first photocharges and a first signal node and generates a second pixel signal based on the second photocharges and the first signal node. The second signal generating unit generates a third pixel signal based on the third photocharges and a second signal node. At least a portion of the second signal generating unit is shared by the first signal generating unit.