公开(公告)号：US20140103192A1

公开(公告)日：2014-04-17

申请号：US14051179

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Yon LEE ,  Ju Hwan JUNG ,  Seok Yong HONG ,  Tae-Chan KIM ,  Dong Ki MIN ,  Yoon Dong PARK ,  Sang-Chul SUL ,  Tae-Seok OH ,  Je Il RYU ,  Kwang-Hyun LEE ,  Young-Gu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/1464 ,  H04N5/3765

Abstract: A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.

Abstract translation: 二元互补金属氧化物半导体（CMOS）图像传感器包括像素阵列和读出电路。 像素阵列包括具有多个子像素的至少一个像素。 读出电路被配置为使用参考信号量化从像素输出的像素信号。 像素信号对应于从子像素输出的子像素信号，从响应于入射光激活的多个子像素之中。

公开(公告)号：US20140103401A1

公开(公告)日：2014-04-17

申请号：US14051040

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Seok OH ,  Tae-Yon LEE ,  Young-Gu JIN ,  Min-Ho KIM ,  Tae-Chan KIM ,  Sang-Chul SUL ,  Kwang-Hyun LEE

IPC: H01L27/148

CPC classification number: H01L27/14806 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14689

Abstract: An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.

Abstract translation: 提供图像传感器。 图像传感器包括形成在第一导电类型的杂质层上的第二导电类型的阱，第一导电类型的源极和漏极区域形成在阱中彼此间隔开，第一光电二极管 在阱中形成的与源极和漏极区重叠的第一导电类型，形成为不与源极和漏极区重叠并形成为与第一光电二极管相邻的第一导电类型的第二光电二极管，以及栅电极 形成在第一和第二光电二极管上。

公开(公告)号：US20150029365A1

公开(公告)日：2015-01-29

申请号：US14340703

申请日：2014-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi-Deok Ryan LEE ,  Hiroshige GOTO ,  Sang-Chul SUL ,  Myung-Won LEE ,  Masaru ISHII

IPC: H04N9/04

CPC classification number: H04N9/045 ,  H01L27/14665 ,  H04N5/37452 ,  H04N5/37457

Abstract: A unit pixel is provided. The unit pixel includes photoelectric converters stacked on each other and configured to generate photo-charges in response to light signals within respective wavelength ranges and provide the photo-charges to respective storage nodes; memories configured to concurrently receive and store the photo-charges from the respective storage nodes in response to a common control signal; and a signal generator that generates analog signals based on the photo-charges stored in the memories, respectively.

Abstract translation: 提供单位像素。 单位像素包括彼此堆叠并被配置为响应于各个波长范围内的光信号而产生光电荷的光电转换器，并且向相应的存储节点提供光电荷; 存储器，被配置为响应于公共控制信号同时从各个存储节点接收和存储光电费; 以及分别基于存储在存储器中的光电荷产生模拟信号的信号发生器。