公开(公告)号：US09634144B2

公开(公告)日：2017-04-25

申请号：US14658306

申请日：2015-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hyun An ,  Gab-Jin Nam

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/785 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/78618 ,  H01L29/78696

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a fin disposed on a substrate. The fin may include an insulating layer pattern disposed in a top surface of the fin. The semiconductor devices may also include a wire pattern disposed on the insulating layer pattern to be separated from the insulating layer pattern and a gate electrode surrounding the wire pattern.

公开(公告)号：US20150340490A1

公开(公告)日：2015-11-26

申请号：US14658306

申请日：2015-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hyun An ,  Gab-Jin Nam

IPC: H01L29/78 ,  H01L29/423 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/78618 ,  H01L29/78696

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a fin disposed on a substrate. The fin may include an insulating layer pattern disposed in a top surface of the fin. The semiconductor devices may also include a wire pattern disposed on the insulating layer pattern to be separated from the insulating layer pattern and a gate electrode surrounding the wire pattern.

Abstract translation: 提供了制造半导体器件的半导体器件和方法。 半导体器件可以包括设置在衬底上的翅片。 翅片可以包括布置在翅片的顶表面中的绝缘层图案。 半导体器件还可以包括设置在绝缘层图案上以与绝缘层图案分离的布线图案和围绕线图案的栅电极。