公开(公告)号：US20190043839A1

公开(公告)日：2019-02-07

申请号：US16151652

申请日：2018-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hun YU ,  Tae Young OH ,  Nam Jong KIM ,  Kwang II PARK ,  Chul Sung PARK

IPC: H01L25/065 ,  H01L23/34

Abstract: In one example embodiment, a semiconductor system includes a first chip configured to generate first temperature information of the first chip, the first temperature information being based on at least one temperature measurement using at least one first temperature sensor. The semiconductor system further includes a second chip including a second temperature sensor configured to be controlled based on at least the first temperature information.

公开(公告)号：US20180053539A1

公开(公告)日：2018-02-22

申请号：US15649060

申请日：2017-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun SHIN ,  Tae Young OH

IPC: G11C7/22 ,  G11C7/18 ,  G11C8/10 ,  G11C7/12 ,  G11C7/06 ,  G11C8/08 ,  G11C8/14 ,  G11C7/10 ,  G11C7/20

Abstract: An exemplary embodiment includes a method of controlling a semiconductor device. The semiconductor device includes a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, a row decoder for receiving a row address and selecting a word line corresponding to the row address, a column decoder for receiving a column address and selecting a bit line corresponding to the column address, a sense amplifier for reading data stored in a memory cell connected to the selected word line and the selected bit line, and a data output driver. The method includes setting a calibration code for a driver control code, to control an initial current strength of the data output driver, and changing the calibration code to change the driver control code during a read or write operation for the memory cell array.