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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190157406A1

    公开(公告)日：2019-05-23

    申请号：US16014496

    申请日：2018-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Inchan HWANG ,  Heonjong SHIN ,  Sunghun JUNG ,  Doohyun LEE ,  Hwichan JUN ,  Hakyoon AHN

    IPC: H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L27/092 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66

    Abstract: A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210013206A1

    公开(公告)日：2021-01-14

    申请号：US17038435

    申请日：2020-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： HeonJong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

    IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

    Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220149043A1

    公开(公告)日：2022-05-12

    申请号：US17582357

    申请日：2022-01-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

    IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

    Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200075595A1

    公开(公告)日：2020-03-05

    申请号：US16391757

    申请日：2019-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

    IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

    Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

    METHOD AND ELECTRONIC DEVICE FOR PREDICTING OUTSIDE TEMPERATURE
    5.
    发明公开
    METHOD AND ELECTRONIC DEVICE FOR PREDICTING OUTSIDE TEMPERATURE 审中-公开

    公开(公告)号：US20240255358A1

    公开(公告)日：2024-08-01

    申请号：US18584534

    申请日：2024-02-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangmin LEE ,  Sungyong BANG ,  Sunghun JUNG ,  Jongwoo KIM ,  Hakryoul KIM ,  Mooyoung KIM

    IPC: G01K7/42

    CPC classification number: G01K7/42

    Abstract: According to an embodiment, an electronic device includes: at least one first component and at least one second component arranged in an internal space of the electronic device wherein the first and second components have temperatures that vary differently depending on the operation of the electronic device, a first temperature sensor configured to measure the temperature of the at least one first component, a second temperature sensor configured to measure the temperature of the at least one second component, a memory, and at least one processor operatively connected to the at least one first component, the at least one second component, the first temperature sensor, the second temperature sensor, and the memory, wherein at least one processor is configured to: identify a prediction model related to prediction of the outside temperature stored in the memory, acquire a first temperature of the at least one first component through the first temperature sensor according to a specified period, acquire a second temperature of the at least one second component through the second temperature sensor according to a specified period, and predict the outside temperature corresponding to the acquired first temperature and the acquired second temperature based on the identified prediction model.

    ELECTRONIC DEVICE AND CONTROLLING METHOD THEREFOR
    7.
    发明公开
    ELECTRONIC DEVICE AND CONTROLLING METHOD THEREFOR 审中-公开

    公开(公告)号：US20230189470A1

    公开(公告)日：2023-06-15

    申请号：US18108419

    申请日：2023-02-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungyong BANG ,  Sangmin LEE ,  Sunghun JUNG ,  Jongwoo KIM ,  Hakryoul KIM ,  Mooyoung KIM

    IPC: H05K7/20 ,  G05B19/4155

    CPC classification number: H05K7/20 ,  G05B19/4155 ,  G05B2219/50333

    Abstract: An electronic device includes a sensor, a communication circuit, and a processor configured to learn a scenario based on use of the electronic device in a first temperature range, determine, using the communication circuit and/or the sensor, whether a place element of the electronic device is changed, start the scenario based on determining that the place element is changed, estimate an ambient temperature of the electronic device based on the scenario, and enter a second heating control mode at a second temperature different from a first heating control mode at a first temperature, based on the estimated ambient temperature being different from an internal temperature of the electronic device.

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