公开(公告)号：US20130185612A1

公开(公告)日：2013-07-18

申请号：US13745105

申请日：2013-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Lee ,  Sung-hwan Bae ,  Jong-nam Baek ,  Hyun-seok Kim ,  Sung-bin Kim

IPC: G06F11/07 ,  H03M13/13

CPC classification number: G06F11/0751 ,  G06F11/0793 ,  G06F11/1048 ,  G11C16/00 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H03M13/13

Abstract: A read method in a flash memory system containing a flash memory and a memory controller includes updating a selected one of indexes of a selected one of blocks of the flash memory, in a wear-out table for indexing each of the blocks of the flash memory, and setting a start read level to start read retry on the selected block by referring to a read retry table corresponding to a wear-out degree included in the selected index when a current request of read retry on the selected block is received.

Abstract translation: 包含闪速存储器和存储器控制器的闪速存储器系统中的读取方法包括在磨损表中更新闪速存储器中所选择的一个块的所选择的一个索引中的索引，以对闪存的每个块进行索引 并且当接收到对所选择的块的当前重试请求时，通过参考与包括在所选择的索引中的磨损程度相对应的读取重试表，设置开始读取级别以开始对所选择的块的读取重试。