公开(公告)号：US11355489B2

公开(公告)日：2022-06-07

申请号：US17009941

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounggon Kang ,  Subin Jin ,  Ha-Young Kim

IPC: H01L27/02 ,  H03K3/3562 ,  H03K3/037 ,  H01L27/118

Abstract: A semiconductor device includes a standard cell, which includes first to fourth active areas that are extended in a first direction, first to fourth gate lines that are extended in a second direction perpendicular to the first direction over the first to fourth active areas and are disposed parallel to each other, a first cutting layer that is disposed between the first active area and the second active area and separates the second and third gate lines, a second cutting layer that is disposed between the third active area and the fourth active area and separates the second and third gate lines, a first gate contact that is formed on the second gate line separated by the first cutting layer and the second cutting layer, and a second gate contact that is formed on the third gate line separated by the first cutting layer and the second cutting layer.

公开(公告)号：USD766975S1

公开(公告)日：2016-09-20

申请号：US29535457

申请日：2015-08-06

Applicant: Samsung Electronics Co., Ltd.

Designer： Serrah Lim ,  Subin Jin

公开(公告)号：US11756949B2

公开(公告)日：2023-09-12

申请号：US17246108

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwe Cho ,  Subin Jin

IPC: H01L27/02 ,  G06F30/392 ,  H01L23/528 ,  H01L27/092

CPC classification number: H01L27/0207 ,  G06F30/392 ,  H01L23/5286 ,  H01L27/0924

Abstract: An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.

公开(公告)号：USD767631S1

公开(公告)日：2016-09-27

申请号：US29537485

申请日：2015-08-26

Applicant: Samsung Electronics Co., Ltd.

Designer： Serrah Lim ,  Subin Jin