公开(公告)号：US20170133563A1

公开(公告)日：2017-05-11

申请号：US15341293

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN-WOOK CHUNG ,  Jung-jin KIM ,  Pun-jae CHOI ,  Si-han KIM ,  Sung-don GANG ,  Ah-young WOO

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/50 ,  H01L33/44 ,  H01L33/38 ,  H01L33/60 ,  H01L33/22

CPC classification number: H01L33/56 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/54 ,  H01L33/60

Abstract: A semiconductor light emitting device may include a light emitting package. A light emitting package may include a light emitting stack including a sequential stack of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An encapsulation layer may at least partially surround the second conductivity type semiconductor layer, and a wavelength conversion layer may cover the first conductivity type semiconductor layer. One or more of the encapsulation layer and the wavelength conversion layer may have a greater coefficient of thermal expansion (CTE) than a GaN-based compound semiconductor. The semiconductor light emitting device may include a stress applying structure that may apply a tensile stress to the light emitting stack. The light emitting stack may have reduced thermal droop at an operation temperature and improved luminous efficiency.

公开(公告)号：US20170033268A1

公开(公告)日：2017-02-02

申请号：US15162754

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-kuk LEE ,  Si-han KIM ,  Hyung-kun KIM ,  Yong-min KWON ,  Geun-woo KO

IPC: H01L33/60 ,  H01L33/32 ,  H01L33/56 ,  H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01L33/60 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar electrode and the second pillar electrode.

Abstract translation: 发光二极管（LED）封装包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构; 隔离绝缘层; 分别与第一导电型半导体层和第二导电型半导体层电连接的第一连接电极部分和第二连接电极部分; 分别电连接到第一连接电极部分和第二连接电极部分的第一电极焊盘和第二电极焊盘; 第一模塑树脂层，设置在所述第一电极焊盘和所述第二电极焊盘之间; 分别与第一电极焊盘和第二电极焊盘电连接的第一柱状电极和第二柱状电极; 以及设置在第一模塑树脂层，第一电极焊盘和第二电极焊盘上以及在第一柱状电极和第二柱状电极之间的第二模塑树脂层。