公开(公告)号：US20170133563A1

公开(公告)日：2017-05-11

申请号：US15341293

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN-WOOK CHUNG ,  Jung-jin KIM ,  Pun-jae CHOI ,  Si-han KIM ,  Sung-don GANG ,  Ah-young WOO

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/50 ,  H01L33/44 ,  H01L33/38 ,  H01L33/60 ,  H01L33/22

CPC classification number: H01L33/56 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/54 ,  H01L33/60

Abstract: A semiconductor light emitting device may include a light emitting package. A light emitting package may include a light emitting stack including a sequential stack of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An encapsulation layer may at least partially surround the second conductivity type semiconductor layer, and a wavelength conversion layer may cover the first conductivity type semiconductor layer. One or more of the encapsulation layer and the wavelength conversion layer may have a greater coefficient of thermal expansion (CTE) than a GaN-based compound semiconductor. The semiconductor light emitting device may include a stress applying structure that may apply a tensile stress to the light emitting stack. The light emitting stack may have reduced thermal droop at an operation temperature and improved luminous efficiency.