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公开(公告)号：US20250107065A1
公开(公告)日：2025-03-27
申请号：US18619490
申请日：2024-03-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Seong PARK , Jihyun KHO , Seunghee LEE , Yurim KIM , Yong-Suk TAK , Dong-Gyu KIM
IPC: H10B12/00
Abstract: A semiconductor device includes a semiconductor pattern, a dielectric layer on the semiconductor pattern, and a conductive pattern on the dielectric layer. Each of the semiconductor pattern and the dielectric layer includes impurities. The dielectric layer includes a concentration profile of impurities including a first variation section including a first concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern, and a second variation section including a second concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern.
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公开(公告)号：US20240224510A1
公开(公告)日：2024-07-04
申请号：US18354041
申请日：2023-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunghee LEE , Jaekyeong JEONG , Seungwan SEO , Yongsuk TAK , Yurim KIM , Teawon KIM , Joohee JEONG
IPC: H10B12/00
CPC classification number: H10B12/485 , H10B12/315 , H10B12/34
Abstract: A field-effect transistor includes an insulating barrier layer on a substrate, a gate electrode extending on the insulating barrier layer, a gate insulating layer covering opposite side surfaces and a top surface of the gate electrode, an oxide semiconductor layer on the gate insulating layer and including at least one metal element selected from indium (In) and zinc (Zn), and a source structure and a drain structure separated from each other, the source structure and the drain structure electrically connected to the oxide semiconductor layer. Each of the source structure and the drain structure includes an indium gallium tin oxide (IGTO) film on the oxide semiconductor layer, a conductive metal nitride film on the IGTO film, one of a source electrode and a drain electrode on the conductive metal nitride film, and a top capping layer on a top surface of one of the source electrode and the drain electrode.
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公开(公告)号：US20230354605A1
公开(公告)日：2023-11-02
申请号：US18175198
申请日：2023-02-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Teawon KIM , Yurim KIM , Seunghee LEE , Seungwoo JANG , Yong-Suk TAK
Abstract: A semiconductor memory device includes a bit line, a channel pattern including a horizontal channel portion on the bit line and a vertical channel portion vertically protruding from the horizontal channel portion, a word line on the horizontal channel portion and on a sidewall of the vertical channel portion, and a gate insulating pattern between the word line and the channel pattern. The channel pattern includes an oxide semiconductor and includes first, second, and third channel layers sequentially stacked. The first to third channel layers include a first metal, and the second channel layer further includes a second metal different from the first metal. At least a portion of the first channel layer contacts the bit line.
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公开(公告)号：US20180322908A1
公开(公告)日：2018-11-08
申请号：US15966338
申请日：2018-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moojung KIM , Daehee KIM , Seunghee LEE , Dae-Kyu SHIN
IPC: G11B27/036 , G06K9/00 , G11B27/30
CPC classification number: G11B27/036 , G06K9/00221 , G06K9/00744 , G11B27/3081
Abstract: Various embodiments of the present disclosure relate to an apparatus and method for applying a dynamic effect to a picture in an electronic device. The electronic device may include a memory for storing one or more image frames, a display, and a processor. The processor may be configured to identify an amount of change between the one or more image frames, to determine a partial region from an entire region of at least one image frame detected based on the amount of change among the one or more image frames, to determine a playback mode corresponding to the partial region, and to display the partial region based on at least the playback mode using the display.
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