公开(公告)号：US20250107065A1

公开(公告)日：2025-03-27

申请号：US18619490

申请日：2024-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Seong PARK ,  Jihyun KHO ,  Seunghee LEE ,  Yurim KIM ,  Yong-Suk TAK ,  Dong-Gyu KIM

IPC: H10B12/00

Abstract: A semiconductor device includes a semiconductor pattern, a dielectric layer on the semiconductor pattern, and a conductive pattern on the dielectric layer. Each of the semiconductor pattern and the dielectric layer includes impurities. The dielectric layer includes a concentration profile of impurities including a first variation section including a first concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern, and a second variation section including a second concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern.