公开(公告)号：US20220149210A1

公开(公告)日：2022-05-12

申请号：US17584545

申请日：2022-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Mo KANG ,  Moon Seung YANG ,  Jongryeol YOO ,  Sihyung LEE ,  Sunguk JANG ,  Eunhye CHOI

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/311

Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.

公开(公告)号：US20200381564A1

公开(公告)日：2020-12-03

申请号：US16774653

申请日：2020-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Mo KANG ,  Moon Seung YANG ,  Jongryeol YOO ,  Sihyung LEE ,  Sunguk JANG ,  Eunhye CHOI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.

公开(公告)号：US20220115500A1

公开(公告)日：2022-04-14

申请号：US17560865

申请日：2021-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunhye CHOI ,  Seung Mo KANG ,  Jungtaek KIM ,  Moon Seung YANG ,  Jongryeol YOO

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device including an insulating layer on a substrate; channel semiconductor patterns stacked on the insulating layer and vertically spaced apart from each other; a gate electrode crossing the channel semiconductor patterns; source/drain regions respectively at both sides of the gate electrode and connected to each other through the channel semiconductor patterns, the source/drain regions having concave bottom surfaces; and air gaps between the insulating layer and the bottom surfaces of the source/drain regions.

公开(公告)号：US20210408300A1

公开(公告)日：2021-12-30

申请号：US17470341

申请日：2021-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Seung YANG ,  Eun Hye CHOI ,  Seung Mo KANG ,  Yong Seung KIM ,  Jung Taek KIM ,  Min-Hee CHOI

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423

Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

公开(公告)号：US20170049000A1

公开(公告)日：2017-02-16

申请号：US15206392

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Mo KANG ,  Tae Seuk KANG ,  Cheol Hee KIM ,  Joon Young JO ,  Jong Sun BAEK ,  Heon Yeap BAEK ,  Min Woo YOO

IPC: H05K5/03 ,  A45F5/00 ,  A45C13/00 ,  H05K5/00 ,  A45C11/00

CPC classification number: A45F5/00 ,  A45C11/00 ,  A45C13/002 ,  A45C2011/001 ,  A45C2011/002 ,  A45C2011/003 ,  H04B1/3888 ,  H04M1/185

Abstract: An accessory device comprising: a first cover arranged to be opened and closed when the first cover is mounted on an electronic device, the first cover comprising a first plate, at least one first side wall protruding from the first plate in a first direction, and a first film disposed in a space defined by the sidewall and the plate, wherein the first film and the first side wall are at least partially transparent, and wherein the first film comprises a first layer disposed on the first plate, the first layer being at least partially reflective, a second layer disposed on the first layer, the second layer being at least partially formed of a polymeric material, and a third layer that is disposed on the second layer, the third layer being an anti-wear layer.

Abstract translation: 一种附件装置，包括：第一盖，其布置成当所述第一盖安装在电子装置上时被打开和关闭，所述第一盖包括第一板，在第一方向上从所述第一板突出的至少一个第一侧壁，以及 设置在由所述侧壁和所述板限定的空间中的第一膜，其中所述第一膜和所述第一侧壁至少部分透明，并且其中所述第一膜包括设置在所述第一板上的第一层，所述第一层位于 至少部分反射的，设置在第一层上的第二层，第二层至少部分地由聚合物材料形成，第三层设置在第二层上，第三层是耐磨层。