公开(公告)号：US20250070072A1

公开(公告)日：2025-02-27

申请号：US18640576

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongyo KIM ,  MINSOO KIM ,  SANG-SICK PARK

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L25/065

Abstract: A semiconductor package includes a first semiconductor die, a first under-fill layer on an upper surface of the first semiconductor die, a second under-fill layer on the first under-fill layer, a second semiconductor die provided on the second under-fill layer, and a mold layer on side surfaces of the second semiconductor die, the second under-fill layer, and the upper surface of the first semiconductor die. The first semiconductor die includes a first substrate, a first redistribution pattern on the first substrate, a first redistribution dielectric layer provided on the first redistribution pattern, and a first dam on the first redistribution dielectric layer and along an edge of the first substrate, and the first under-fill layer contacts a side surface of the first dam.

公开(公告)号：US20240162193A1

公开(公告)日：2024-05-16

申请号：US18213852

申请日：2023-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyo KIM ,  UN-BYOUNG KANG ,  SANG-SICK PARK ,  Hanmin LEE ,  Seungyoon JUNG

IPC: H01L25/065 ,  B23K26/38 ,  B23K26/40 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

CPC classification number: H01L25/0657 ,  B23K26/38 ,  B23K26/40 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  B23K2101/40 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2225/06541

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a first semiconductor chip, a lower adhesion layer on the first semiconductor chip, a second semiconductor chip on the lower adhesion layer, an upper adhesion layer on the second semiconductor chip, and a third semiconductor chip on the upper adhesion layer. The lower adhesion layer includes a first cutting surface connected to a top surface of the lower adhesion layer. The upper adhesion layer is in contact with the first cutting surface of the lower adhesion layer.

公开(公告)号：US20230230946A1

公开(公告)日：2023-07-20

申请号：US17939127

申请日：2022-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyo KIM ,  UN-BYOUNG KANG ,  MINSOO KIM ,  SANG-SICK PARK ,  Seungyoon JUNG

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/09 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/08 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/81203 ,  H01L24/81 ,  H01L2924/3511 ,  H01L2924/182 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06589 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/1703 ,  H01L2224/17055 ,  H01L2224/17104 ,  H01L2224/17179 ,  H01L2224/17132 ,  H01L2224/16012 ,  H01L2224/16055 ,  H01L2224/16059 ,  H01L2224/16104 ,  H01L2224/0801 ,  H01L2224/08056 ,  H01L2224/08055 ,  H01L2224/0903 ,  H01L2224/09179 ,  H01L2224/09132 ,  H01L2224/73204

Abstract: A semiconductor package comprises a first die having a central region and a peripheral region that surrounds the central region; a plurality of through electrodes that penetrate the first die; a plurality of first pads at a top surface of the first die and coupled to the through electrodes; a second die on the first die; a plurality of second pads at a bottom surface of the second die, the bottom surface of the second die facing the top surface of the first die; a plurality of connection terminals that connect the first pads to the second pads; and a dielectric layer that fills a space between the first die and the second die and surrounds the connection terminals. A first width of each of the first pads in the central region may be greater than a second width of each of the first pads in the peripheral region. Each of the connection terminals may include a convex portion at a lateral surface thereof, which protrudes beyond a lateral surface of a respective first pad and a lateral surface of a respective second pad. The convex portion may protrude in a direction away from a center of the first die. Protruding distances of the convex portions may increase in a direction from the center of the first die toward an outside of the first die.