公开(公告)号：US10580891B2

公开(公告)日：2020-03-03

申请号：US16193521

申请日：2018-11-16

申请人： Samsung Electronics Co., Ltd.

发明人： Sung-Soo Kim ,  Gi-Gwan Park ,  Sang-Koo Kang ,  Koung-Min Ryu ,  Jae-Hoon Lee ,  Tae-Won Ha

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66

摘要： A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.

公开(公告)号：US10818657B2

公开(公告)日：2020-10-27

申请号：US15233123

申请日：2016-08-10

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-Ki Min ,  Koung-Min Ryu ,  Sang-Koo Kang

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L21/8234

摘要： There is provided a semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer using a hybrid interlayer insulating film. The semiconductor device includes a gate electrode on a substrate, a gate spacer being on a sidewall of the gate electrode and including an upper portion and a lower portion, a lower interlayer insulating film being on the substrate and overlapping with the lower portion of the gate spacer, and an upper interlayer insulating film being on the lower interlayer insulating film and overlapping with the upper portion of the gate spacer, wherein the lower interlayer insulating film is not interposed between the upper interlayer insulating film and the upper portion of the gate spacer.

公开(公告)号：US10177253B2

公开(公告)日：2019-01-08

申请号：US15290240

申请日：2016-10-11

申请人： Samsung Electronics Co., Ltd.

发明人： Sung-Soo Kim ,  Gi-Gwan Park ,  Sang-Koo Kang ,  Koung-Min Ryu ,  Jae-Hoon Lee ,  Tae-Won Ha

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51

摘要： A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.