公开(公告)号：US11227914B2

公开(公告)日：2022-01-18

申请号：US16776677

申请日：2020-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US11710770B2

公开(公告)日：2023-07-25

申请号：US17575918

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

CPC classification number: H01L29/0673 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/42392

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US20250006792A1

公开(公告)日：2025-01-02

申请号：US18411313

申请日：2024-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyun Ryu ,  Dong Hoon Hwang ,  Myung Il Kang ,  Hyo Jin Kim ,  Byung Ho Moon ,  Nam Hyun Lee

IPC: H01L29/10 ,  H01L29/417

Abstract: A semiconductor device includes a first and second channel separation structures extending in a first direction and spaced apart from each other in a second direction, first gate structures spaced apart from each other in the first direction between the first and second channel separation structures and in contact with the first and second channel separation structures, first and second channel patterns including first and second sheet patterns, respectively, spaced apart from each other in a third direction and in contact with the corresponding first and second channel separation structures, first and second source/drain patterns between the first and second channel separation structures, the first source/drain patterns in contact with the first channel patterns and the first channel separation structure, the second source/drain patterns in contact with the second channel patterns and the second channel separation structure, and first gate separation structures between the first and second source/drain patterns.