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    Dual slidable electronic device
    2.
    发明授权
    Dual slidable electronic device 有权

    公开(公告)号：US11960322B2

    公开(公告)日：2024-04-16

    申请号：US17567387

    申请日：2022-01-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngsang Jang ,  Kukhwan Kim ,  Kyungjin Lee ,  Byungchan Lee

    IPC: G06F1/16

    CPC classification number: G06F1/1624 ,  G06F1/1652

    Abstract: According to certain embodiments, an electronic device comprises: a housing surrounding at least a side surface of the electronic device; a flexible display exposed through a first surface of the electronic device facing a first direction, the exposed area varying based on the movement of the housing; and a flexible material exposed through a second surface of the electronic device facing a second direction opposite to the first direction, the exposed area varying based on the movement of the housing, wherein the width of the flexible material that is exposed through the second surface, expands in a third direction in accordance with the expansion of the width of the flexible display in the third direction, the third direction being substantially perpendicular to the first direction and the second direction.

    Magnetoresistive random access memory device
    3.
    发明授权
    Magnetoresistive random access memory device 有权

    公开(公告)号：US12112784B2

    公开(公告)日：2024-10-08

    申请号：US17751898

    申请日：2022-05-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungchul Lee ,  Kyungjin Lee

    IPC: G11C11/00 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

    CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

    Abstract: A magneto resistive random access memory (MRAM) device including a spin orbit torque structure including a stack of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern; and a magnetic tunnel junction (MTJ) structure on the spin orbit torque structure, the MTJ structure including a stack of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern, wherein the spin orbit torque structure extends in a first direction parallel to an upper surface of the spin orbit torque structure, the ferromagnetic pattern includes a horizontal magnetic material, and the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface of the spin orbit torque structure, the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure.

    Storage controller and method of operating electronic system
    6.
    发明授权
    Storage controller and method of operating electronic system 有权

    公开(公告)号：US12294652B2

    公开(公告)日：2025-05-06

    申请号：US17898045

    申请日：2022-08-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungwoo Noh ,  Jisoo Kim ,  Kyungjin Lee ,  Younghyun Ji

    IPC: H04L9/32 ,  H04L9/06 ,  H04L9/08

    Abstract: A storage device includes a memory device storing data, and a controller controlling the memory device. The controller obtains and stores a certificate including a public key of an administrator from a host device, provides a nonce to the host device in response to a request from the host device, receives a token request signature including the nonce, a user identifier (ID), an allowed command list and a lifetime from the host device, and when it is verified that the token request signature is generated by a legitimate administrator by decrypting the token request signature with the public key, generates a token for allowing a user corresponding to the user ID to execute a command included in the allowed command list during the lifetime, and a token secret key corresponding to the token, and provides the token and the token secret key to the host device.

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