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10 条记录 (耗时 0.016 秒)

    Humidifier
    1.
    发明授权
    Humidifier 有权

    公开(公告)号：US11561016B2

    公开(公告)日：2023-01-24

    申请号：US17090011

    申请日：2020-11-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Beomseok Seo ,  Kyunghoon Kim ,  Sanghoon Lee ,  Seojeong Kim ,  Changmin Seok

    IPC分类号： F24F6/02 ,  C02F1/00 ,  C02F1/32 ,  C02F1/461 ,  C02F1/467 ,  F24F6/00

    摘要： A humidifier includes a storage water tank configured to accommodate a predetermined amount of water; a circulation water tank having a smaller capacity than the storage water tank and including a circulation low water level sensor; a supply pump configured to supply water from the storage water tank to the circulation water tank; a circulation pump configured to supply water from the circulation water tank to a humidifying member; a residual water tank configured to accommodate water discharged from the circulation water tank; a drainage member disposed between the circulation water tank and the residual water tank selectively to discharge water from the circulation water tank to the residual water tank and a processor configured to control the drainage member to discharge water from the circulation water tank to the residual water tank when a low water level signal is received from the circulation low water level sensor.

    Double suction fan and air conditioner having the same
    2.
    发明授权
    Double suction fan and air conditioner having the same 有权

    公开(公告)号：US11525455B2

    公开(公告)日：2022-12-13

    申请号：US16697950

    申请日：2019-11-27

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kisup Lee ,  Jinbaek Kim ,  Kyunghoon Kim ,  Jaehyoung Sim ,  Dohoon Kim ,  Seonghyun Yoon ,  Joonho Yoon

    IPC分类号： F04D29/28

    摘要： A double suction fan includes first and second rings spaced at a predetermined distance apart from and in parallel to each other, an intermediate plate disposed between the first and second rings and including a shaft hole, a plurality of first blades disposed between the first ring and the intermediate plate, a plurality of second blades disposed between the second ring and the intermediate plate, and first and second rotating hubs disposed on both side surfaces of the intermediate plate, wherein each of the first and second rotating hubs is formed of a plurality of hub plates which are disposed perpendicular to the intermediate plate around the shaft hole, and wherein the plurality of hub plates are formed to evenly distribute air introduced through the first and second rings in a longitudinal direction of the plurality of first and second blades when the intermediate plate rotates.

    Server and controlling method thereof
    5.
    发明授权
    Server and controlling method thereof 有权

    公开(公告)号：US11234047B2

    公开(公告)日：2022-01-25

    申请号：US17091590

    申请日：2020-11-06

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Kyunghoon Kim

    IPC分类号： H04N21/438 ,  H04N21/643 ,  H04N21/61 ,  H04N21/442 ,  H04N21/436

    摘要： A server is provided. The server includes a communicator and a processor configured to, from a plurality of electronic apparatuses that reproduce content received from an external server, receive information regarding reproduction of the content and information on home network environments of the plurality of electronic apparatuses through the communicator, based on the information regarding reproduction of the content, identify a plurality of qualities of a channel providing the content for each of the plurality of home network environments, and transmit information on the plurality of qualities of the channel identified for each of the plurality of home network environments to the external server through the communicator to add the information on the plurality of qualities of the channel to a channel list provided by the external server.

    VERTICAL MEMORY DEVICE
    9.
    发明公开
    VERTICAL MEMORY DEVICE 审中-公开

    公开(公告)号：US20240172457A1

    公开(公告)日：2024-05-23

    申请号：US18497027

    申请日：2023-10-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Youngji Noh ,  Jongho Woo ,  Jooheon Kang ,  Kyunghoon Kim ,  Myunghun Woo

    IPC分类号： H10B63/00

    CPC分类号： H10B63/845 ,  H10B63/34

    摘要： A vertical memory device may include a cell stacked structure on a substrate, wherein the cell stacked structure includes an insulation layer pattern and a gate pattern are alternately and repeatedly stacked, and wherein the cell stacked structure extends in a first direction parallel to an upper surface of the substrate, and wherein an edge portion in the first direction of the cell stacked region is disposed in the second region and has a step portion having a step shape; an etch stop structure on an upper surface of each of gate patterns of the step portion of the cell stacked structure, wherein the etch stop structure includes a transition metal oxide; an insulating interlayer covering the cell stacked structure; and a contact plug passing through the insulating interlayer and the etch stop structure, wherein the contact plug contacts the upper surface of each of the gate patterns.