公开(公告)号：US20180182845A1

公开(公告)日：2018-06-28

申请号：US15662248

申请日：2017-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： GeumJung SEONG ,  JeongYun LEE ,  SeungSoo HONG ,  KyungSeok MIN ,  SeungJu PARK ,  Youngmook OH ,  Bora LIM

IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/764 ,  H01L27/088 ,  H01L29/08 ,  H01L23/535

CPC classification number: H01L29/0653 ,  H01L21/764 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/535 ,  H01L27/0886 ,  H01L29/0847

Abstract: Active patterns protrude from a substrate. The active patterns include a first active pattern, a second active pattern spaced apart from the first active pattern at a first distance, and a third active pattern spaced apart from the second active pattern at a second distance greater than the first distance. A gate spacer is disposed on sidewalls of a gate electrode running across the active patterns. Source/drain regions include a first to a third source/drain regions disposed on a region of one of the active patterns. The region of one of the active patterns is disposed adjacent to a side of the gate electrode. First and second protective insulation patterns are disposed on the substrate between the first and second active patterns below the first and second source/drain regions and between the second and third active patterns below the second and third source/drain regions, respectively.