公开(公告)号：US11217695B2

公开(公告)日：2022-01-04

申请号：US16815744

申请日：2020-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee ,  Krishna Bhuwalka ,  Myunggil Kang ,  Kyoungmin Choi

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L21/8234

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).

公开(公告)号：US20220115539A1

公开(公告)日：2022-04-14

申请号：US17560804

申请日：2021-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee ,  Krishna Bhuwalka ,  Myunggil Kang ,  Kyoungmin Choi

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/10 ,  H01L29/786 ,  H01L29/423

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).

公开(公告)号：US11705521B2

公开(公告)日：2023-07-18

申请号：US17560804

申请日：2021-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee ,  Krishna Bhuwalka ,  Myunggil Kang ,  Kyoungmin Choi

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/7851 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/78696

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).

公开(公告)号：US20200381555A1

公开(公告)日：2020-12-03

申请号：US16815744

申请日：2020-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee ,  Krishna Bhuwalka ,  Myunggil Kang ,  Kyoungmin Choi

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/423

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).