公开(公告)号：US20190198426A1

公开(公告)日：2019-06-27

申请号：US16033620

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Doo Won KWON ,  Kwan Sik KIM ,  Tae Young SONG ,  Sung Hyun YOON

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L21/321 ,  H01L31/02

CPC classification number: H01L23/481 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/5329 ,  H01L31/02005

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

公开(公告)号：US20190103425A1

公开(公告)日：2019-04-04

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun YOON ,  Doo Won KWON ,  Kwan Sik KIM ,  In Gyu BAEK ,  Tae Young SONG

IPC: H01L27/146 ,  H01L23/00 ,  H01L21/768 ,  H01L31/18 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L21/683

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US20210343790A1

公开(公告)日：2021-11-04

申请号：US17373103

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Kwan Sik KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Man Geun CHO

IPC: H01L27/30 ,  H01L49/02 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US20200058707A1

公开(公告)日：2020-02-20

申请号：US16391616

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Kwan Sik KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Man Geun CHO

IPC: H01L27/30 ,  H04N5/378 ,  H01L49/02

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US20190131336A1

公开(公告)日：2019-05-02

申请号：US16018709

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun YOON ,  Doo Won KWON ,  Kwan Sik KIM ,  Tae Young SONG ,  Min Jun CHOI

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.