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公开(公告)号：US20210343790A1
公开(公告)日：2021-11-04
申请号：US17373103
申请日：2021-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min Jun CHOI , Kwan Sik KIM , Chang Hwa KIM , Sang Su PARK , Man Geun CHO
IPC: H01L27/30 , H01L49/02 , H04N5/378 , H01L27/146
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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公开(公告)号：US20200058707A1
公开(公告)日：2020-02-20
申请号：US16391616
申请日：2019-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min Jun CHOI , Kwan Sik KIM , Chang Hwa KIM , Sang Su PARK , Man Geun CHO
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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