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公开(公告)号:US20150221746A1
公开(公告)日:2015-08-06
申请号:US14687488
申请日:2015-04-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyuk-soon CHOI , Jung-hee LEE , Jai-kwang SHIN , Jae-joon OH , Jong-bong HA , Jong-seob KIM , In-jun HWANG , Ki-ha HONG , Ki-sik IM , Ki-won KIM , Dong-seok KIM
IPC: H01L29/66 , H01L21/02 , H01L29/205 , H01L29/20 , H01L29/201
CPC classification number: H01L29/66462 , H01L21/0254 , H01L21/76237 , H01L29/0847 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/7787
Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
Abstract translation: 所述方法可以包括在衬底上形成第一材料层,增加第一材料层的电阻,以及在第一材料层上形成彼此间隔开的源图案和漏极图案,带隙为 源极和漏极图案大于第一材料层的带隙。
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公开(公告)号:US20200152277A1
公开(公告)日:2020-05-14
申请号:US16675914
申请日:2019-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young-sun MIN , Vivek Venkata KALLURU , Tae-hong KWON , Ki-won KIM , Sung-whan SEO , Bilal Ahmad JANJUA
Abstract: A charge pump includes: a charging unit including a first n-type transistor connected between an input terminal configured to receive an input voltage and a first node, a second n-type transistor connected between the input terminal and a second node, a first gate control element configured to control the first n-type transistor based on a first clock signal and a second gate control element configured to control the second n-type transistor based on a second clock signal having a phase opposite to the first clock signal; a first pumping capacitor including one end connected to the first node and an other end configured to receive the first clock signal; a second pumping capacitor including one end connected to the second node and an other end configured to receive the second clock signal; and an output unit.
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